[1]
|
E. A. Anagnostakis, “Characterisation of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity,” Physica Status Solidi A, Vol. 126, No. 2, 1991, pp. 397-410. doi:10.1002/pssa.2211260211
|
[2]
|
D. E. Theodorou and E. A. Anagnostakis, “Persistent Photoconductivity and DX Centres,” Physical Review B Vol. 44, 1991, pp. 3352-3354.
doi:10.1103/PhysRevB.44.3352
|
[3]
|
E. A. Anagnostakis, “Photoconductive Response of GaAs Epitaxial Layers,” Applied Physics A, Vol. 54, No. 1, 1992, pp. 68-71. doi:10.1007/BF00348133
|
[4]
|
E. A. Anagnostakis, “Determination of Persistent Photoconductivity within Semiconductor Epitaxial Layers by Photoconductive Gain,” Physical Review B, Vol. 46, No. 12, 1992, pp. 7593-7595. doi:10.1103/PhysRevB.46.7593
|
[5]
|
E. A. Anagnostakis, “On a Scheme of Nanoheterointerfacial Intersub-Band 15-THz Luminescence,” Physica B Vol. 405, No. 1, 2010, pp. 25-28.
doi:10.1016/j.physb.2009.08.010
|
[6]
|
E. A. Anagnostakis, “Optoelectronic Nanoheterointerface Functional Eigenstate Photodynamics,” Physica B, Vol. 405, No. 1, 2010, pp. 38-40.
doi:10.1016/j.physb.2009.08.002
|
[7]
|
E. A. Anagnostakis and D. E. Theodorou, “Semiconductor Heterointerface Characterisation via Effective Harmonic Oscillator Simulation,” Physica Status Solidi B, Vol. 188, No. 2, 1995, pp. 689-695.
doi:10.1002/pssb.2221880212
|
[8]
|
J. Singh, “Semiconductor Optoelectronics,” Mc Graw- Hill, Series in Electrical and Computing Engineering, Singapore, 1995, Chapter 6.
|
[9]
|
G. E. Zardas, P. H. Yannakopoulos, Ch. I. Symeonides, and P. C. Euthymiou, “Persistent Photoconductivity in an InP: Fe Single Layer Structure a 10-pound note at Room Temperature,” Materials Science: Poland, Vol. 23, 2005, pp. 985-988.
|