Modelling of Thermal Behavior N-Doped Silicon Resistor ()
Fouad Kerrour,
Ali Boukabache,
Patrick Pons
Laboratory of Architecture and Systems Analysis, National Centre of Scientific Research, Toulouse, France.
Modeling of Energy Renewable Devices and Nano-Metric Laboratory, University of Mentouri, Constantine, Algeria.
DOI: 10.4236/jst.2012.23019
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Abstract
From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.
Share and Cite:
F. Kerrour, A. Boukabache and P. Pons, "Modelling of Thermal Behavior N-Doped Silicon Resistor,"
Journal of Sensor Technology, Vol. 2 No. 3, 2012, pp. 132-137. doi:
10.4236/jst.2012.23019.
Conflicts of Interest
The authors declare no conflicts of interest.
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