Dr. Hédi Fitouri

University of Monastir, Tunisia

Assistant Professor

Email: hedi.fitouri@fsm.rnu.tn

Qualifications

2009 Ph.D., Physical and Natural Sciences of Tunis, Materials Science

Publications(selected)

1. “Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBinanoislands grown by metalorganic vapor phase epitaxy” R. Boussaha, H. Fitouri, A. Rebey, B. El Jani, Applied Surface Science, 291, 40 (2014).
2. “Atmospheric-pressure metal–organic vapor-phase epitaxyof GaAsBi alloys on high index GaAs substrates” I. Zaied, H. Fitouri, Z. Chine, A. Rebey, B. El Jani,  Journal of Physics and Chemistry of Solids, 75 (2), 244 (2014).
3. “Oxidation of bismuth nano-droplets deposit on GaAs substrate” H. Fitouri, R. Boussaha, A. Rebey, B. El Jani, Applied Physics A: Materials Science and Processing 112 (3) , 701 (2013).
4. “High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy” T. Mzoughi, H. Fitouri, I. Moussa, A. Rebey, B. El Jani Journal of Alloys and Compounds 524, 26 (2012).
5. “Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy” Z. Chine, H. Fitouri, I. Zaied, A. Rebey, B. El Jani Journal of Crystal Growth 330 35 (2011).
6. “Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction” H. Fitouri, I. Moussa, A. Rebey, B. El Jani Microelectronic Engineering 88 476 (2011).
7. “Photoreflectance analysis of diluted GaAsBi alloy” I. Zaied, H. Fitouri, Z. Chine, A. Rebey, B. El Jani Global Journal of Physical Chemistry V 2 241 (2011).
8. “Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy” Z Chine, H Fitouri, I Zaied, A Rebey and B El Jani Semicond. Sci. Technol. 25 065009 (2010).
9. “Spectroscopic Ellipsometry study on the dielectric functions of the GaAs1-xBix alloys grown on GaAs substrates by AP-MOVPE” N. Ben Sedrine, I. Moussa, H. Fitouri, A. Rebey, B. El Jani, and R. Chtourou  Applied Physics Letters 95, 011910, (2009).
10. “Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037 alloy” I. Moussa, H. Fitouri, Z. Chine, A. Rebey, B. El Jani. Semiconductor Science and Technology 23, 125034, (2008).
11. “Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy” I. Moussa, H. Fitouri, A. Rebey, B. El Jani. Thin Solid Films 516, 8372, (2008).
12. “Surface analysis of different oriented GaAs substrates annealed under bismuth flow” H. Fitouri, I. Moussa, A. Rebey, B. El Jani. Journal of Crystal Growth 300, 347, (2007).
13. “GaN property evolution at all stages of MOVPE Si/N treatment growth” I. Halidou, Z. Benzarti, H. Fitouri, W. Fathallah, B. El Jani. Physica Status Solidi (c) 4, No. 1, 129 (2007).
14. “AP-MOVPE of thin GaAs1-xBix alloys” H. Fitouri, I. Moussa, A. Rebey, A. Fouzri, B. El Jani. Journal of Crystal Growth 295, 114, (2006).
15. “Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment” H. Fitouri, Z. Benzarti, I. Halidou, T. Boufaden, B. El Jani. Applied Surface Science 253, 258, (2006).
16. “Laser-reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation” H. Fitouri, Z. Benzarti, I. Halidou, T. Boufaden, and B. El Jani. Physica Status Solidi (a) 202, No. 13, 2467, (2005).
17. Elaboration des alliages GaAsBi sur substrat GaAs par EPVOM: Etude des propriétés physiques de GaAsBi (Éditions Universitaires Européennes), 2011.

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