Butcher, K.S.A., Afifuddin, P., Chen, P.T., Godlewski, M., Szczerbakow, A., Goldys, E.M., Tansley, T.L. and Freitas Jr., J.A. (2000) Glass Substrates for GaN Using ZnO Buffer Layers. Proceedings of Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, 6-8 December 2000, 535-538.
http://dx.doi.org/10.1109/COMMAD.2000.1023005

has been cited by the following article:

• TITLE: Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

  AUTHORS: Yuichi Sato, Shota Ishizaki, Yoshifumi Murakami, Mohamad Idham, Nur Ain, Tatsuya Matsunaga

  KEYWORDS: GaN, InGaN, Amorphous Carbon, Graphite, Quartz Glass, Ge Doping, Mg Doping

  JOURNAL NAME: Journal of Modern Physics, Vol.6 No.9, August 21, 2015

  ABSTRACT: Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films; and p-type conduction in the films was confirmed.