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K. C. Liu, W. H. Tzeng, K. M. Chang, et al. “The Resistive Switching Characteristics of a Ti/Gd2O3/Pt RRAM Device,” Microelectronics Reliability, Vol. 50, No. 5, 2010, pp. 670-673.
http://dx.doi.org/10.1016/j.microrel.2010.02.006

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