TITLE:
Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces
AUTHORS:
Gopal G. Pethuraja, Roger E. Welser, Ashok K. Sood, Changwoo Lee, Nicholas J. Alexander, Harry Efstathiadis, Pradeep Haldar, Jennifer L. Harvey
KEYWORDS:
Sputtered Amorphous Silicon; Electrical Contact Characteristics; ITO/Si Contact
JOURNAL NAME:
Advances in Materials Physics and Chemistry,
Vol.2 No.2,
June
20,
2012
ABSTRACT: We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.