"
Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices"
written by Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu,
published by
Journal of Materials Science and Chemical Engineering,
Vol.4 No.1, 2016
has been cited by the following article(s):
[1]
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Plasma Research Express,
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DOI:10.1088/2516-1067/ab3f90
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[2]
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Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
Journal of Materials Science and Chemical Engineering,
2018
DOI:10.4236/msce.2018.61003
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[3]
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STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
Journal of Materials Science and Chemical Engineering,
2017
DOI:10.4236/msce.2017.51014
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[4]
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Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers
Journal of Materials Science and Chemical Engineering,
2017
DOI:10.4236/msce.2017.51006
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[5]
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Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation
Journal of Materials Science and Chemical Engineering,
2017
DOI:10.4236/msce.2017.51005
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