Journal of Modern Physics

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org
"2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s"
written by Manel Charfeddine, Hafedh Belmabrouk, Mohamed Ali Zaidi, Hassen Maaref,
published by Journal of Modern Physics, Vol.3 No.8, 2012
has been cited by the following article(s):
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[2] Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations …
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[4] Characterization of AlInN/GaN based HEMT for Radio Frequency Applications
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[5] Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function
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[6] Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire
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[7] Modeling and Analysis of Electrical Characteristics of Symmetric Double Gate HEMT
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[8] AlGaN Barrier 및 GaN Buffer 두께 변화에 따른 AlGaN/GaN HEMT 소자의 트랜스컨덕턴스 및 항복전압 동작 특성 향상에 관한 시뮬레이션 연구
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[9] Performance Prediction of GaN HEMTs Using Angelov and Curtice Models
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[10] A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection
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[11] A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance
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[12] Design, Simulation and Characterization of Reconfigurable Mixer Using Gan Hemt Technology
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[13] Modeling of access resistances and channel temperature estimation for GaN HEMT
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[14] An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs
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[15] Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications
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[16] Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model
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[17] Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs
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[18] Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application
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[19] Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
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[20] Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
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[21] Modeling and Simulation of Non-Linear Microwave Power Amplifier Using Gan Hemt for S-Band Applications
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[22] Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate
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[23] Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model
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[24] Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors.
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[26] Solid-State Power Density Enabling Unprecedented EMP Capabilities.
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[27] Studies on the Effects of Aluminium Mole Fraction, Doping Concentration and Gate Length to Control the Drain Current in GaN based High Electron Mobility …
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[28] Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm
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[29] Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor
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[30] Semi-classical and Quantum Transport for High Speed and High Power Electronic and Opto-electronic Devices
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[31] Correlation between Kink effect and trapping mechanism through H1 hole trap in Al 0.22 Ga 0.78 N/GaN/SiC HEMTs by current DLTS: field effect enhancement
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[32] Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
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[33] Self-Heating in the HEMT AlGaN/GaN transistor
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[34] Gallium Nitride—Emerging Future Technology for Low-Power Nanoscale IC Design
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[35] Etude et contribution à l'optimisation de la commande des HEMTs GaN
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[36] Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
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[37] Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
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[38] Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm
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[39] Gallium Nitride based HEMTs in Nano-Scale Regime
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[40] Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
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[41] YÜKSEK VOLTAJ VE DÜŞÜK KAÇAK AKIM İÇİN ALD İLE PASİVE EDİLMİŞ MIS HEMT ÜRETİMİ
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[43] Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization
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[44] Review on the Designs and Characteristics of High-Electron Mobility Transistors
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[46] SiC and GaN Power Semiconductor Devices
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[47] Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's
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[48] Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm
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[49] Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs
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[50] Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in …
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[51] Analytical Modeling and Simulation Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection
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[52] Adaptation of Spectral Clustering in Telecommunication Industry for Customer Relationship Management
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[53] Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's.
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[54] Design of a multi-MHz resonant driver chip for high-voltage
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[55] Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density
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[56] Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors
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[57] Calculating Transconductance of Nano-HEMT for Different Parasitic Resistances and External Biasing Conditions
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[58] Studies on the Variations of Drain Current in Gallium Nitride Based High Electron Mobility Transistors
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[59] Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
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[60] Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
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[61] Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
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[62] An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design
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[63] Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to …
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[64] Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
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[65] Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
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[66] Effect of Aluminium Nitride Nucleation-Layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
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[76] Fabrication of ALN/GAN MIS-Hemt with SIN as gate dielectric and performance enhancement with ALD deposited alumina
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[77] Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface
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[78] Characteristics of AlGaN/GaN HEMTs for Detection of MIG
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[80] A physics-based compact device model for GaN HEMT power devices
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[81] Development of InAlN HEMTs for space application
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[82] Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
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[83] Variations of Source Current in the Double-Heterojunction HEMTs
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[84] Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer
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[85] Dependence of Sheet Charge Density on Strain Relaxation and Material Composition for 2DEG
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[86] Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer
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[87] Modelling of advanced submicron Gate InGaAs/InAlAs pHEMTS and RTD devices for very high frequency applications
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[88] GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits
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[89] Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
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[90] Performance analysis of 20 nm gate-length In0. 2Al0. 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
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[92] Performance analysis of 20 nm gate-length In0: 2Al0: 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
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