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I. Ahmad, M. Holtz, N. N. Faleev and H. Temkin, “Dependence of the Stress-Temperature Coefficient on Dislocation Density in Epitaxial GaN Grown on α-Al2O3 and 6H-SiC Substrates,” Journal of Applied Physics, Vol. 95, No. 4, 2004, pp. 1692-1697.doi:10.1063/1.1637707

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