Author(s)

Mame Faty Mbaye Fall¹, Idrissa Gaye², Dianguina Diarisso², Gora Diop³, Khady Loum¹, Nafy Diop¹, Khalidou Mamadou Sy³, Mor Ndiaye³, Gregoire Sissoko³

¹Ecole Polytechnique de Thiès, Thiès, Sénégal.
²Institute of Technology, University of Thiès, Thiès, Sénégal.
³Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.

Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n^＋/p) and back surface (p^＋/p), the AC expression of the excess minority carriers’ density δ (T, ω) is determined. The AC density of photocurrent J_ph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

Silicon Solar Cell, AC Back Surface Recombination Velocity, Temperature, Bode and Nyquist Diagrams

Fall, M. , Gaye, I. , Diarisso, D. , Diop, G. , Loum, K. , Diop, N. , Sy, K. , Ndiaye, M. and Sissoko, G. (2021) AC Back Surface Recombination Velocity in n^＋-p-p^＋ Silicon Solar Cell under Monochromatic Light and Temperature. Journal of Electromagnetic Analysis and Applications, 13, 67-81. doi: 10.4236/jemaa.2021.135005.