Journal of Materials Science and Chemical Engineering
Vol.5 No.1(2017), Paper ID 73253, 11
pages
DOI:10.4236/msce.2017.51003
TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan
Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
Hitachi Kokusai Electric Inc., Toyama, Japan
Copyright © 2017 Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Yamanaka, J. , Inoue, S. , Arimoto, K. , Nakagawa, K. , Sawano, K. , Shiraki, Y. , Moriya, A. , Inokuchi, Y. and Kunii, Y. (2017) TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing.
Journal of Materials Science and Chemical Engineering,
5, 15-25. doi:
10.4236/msce.2017.51003.