^{1}

^{2}

^{2}

^{1}

^{3}

^{1}

^{*}

In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C
_{0}(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on X
_{cc}(T) is studied. X
_{cc}(T) is the abscissa of the maximum of δ(x).

The depletion region of a solar cell called transitional capacity due to ionization of fixed charges can be assimilated to a plane capacitor [

The aim is to determine the doping rate [_{0}(T) of a silicon solar cell in short circuit.

The solar cell is n + -p-p + type and its structure is shown in

When the solar cell is illuminated, there is creation of electron-hole pairs in the base. The excess minority carriers’ density in the base is modeled by the following continuity equation:

with

δ(x) is the electrons density generated in the base at position x,

G(x) is the minority carriers generation rate at position x in the base [

Coefficients a_{i} and b_{i} are obtained from tabulated values of the radiation in A.M1, 5 condition [

These coefficients are given as follow: a_{1} = 6.13 × 10^{20} cm^{−}^{3}/s; a_{2} = 0.54 × 10^{20} cm^{−}^{3}/s; a_{3} = 0.0991 × 10^{20} cm^{−}^{3}/s; b_{1} = 6630 cm^{−}^{1}; b_{2} = 1000 cm^{−}^{1}; b_{3} = 130 cm^{−}^{1}, L is the electron diffusion length in the base, and τ their lifetime. D(T) is the electron diffusion coefficient in the base given by the well known Einstein relation, temperature dependant, expressed as:

and

k_{b} is the Boltzmann constant, q is the elementary charge of an electron Equation (1) has the general solution

Expressions of A and B are determined from the following boundary conditions [

1) At the junction (x = 0)

2) At the back surface (x = H)

S_{f} is the excess minority carriers recombination velocity at the junction, it also characterizes the operating point of the solar cell [

S_{b} is the recombination velocity on the back of excess charge minority carriers in the base [

Three parts are noted in

The first part which is the negative gradient. This gradient corresponds to the passage of minority carriers created ted in this part. The second part represents a zero gradient. This gradient defines the point of maximum density corresponding to the abscissa X_{sc}(T). This gradient is a concentration of minority carriers. This gradient at this point defines the storage barrier of minority charge carriers. The third part corresponds to a negative gradient. This gradient prevents the minority carriers passage towards the barrier. These carriers will be recombined in volume and in solar cell back surface.

The variation of temperature is more sensitive at the maximum density point corresponding to the abscissa X_{sc}(T). The shift of the maximum in depth when the temperature rises, causes a space charge zone enlargement.

The minority carrier density profile in function of depth in the base is proposed in

X_{oc}(T) is the space charge zone thickness when the solar cell operates in open circuit.

X_{sc}(T) is the space charge zone thickness when the solar cell operates in short-circuits.

Then the solar cell capacitance efficiency η(T) can be defined from the X_{oc}(T) and X_{sc}(T) abscissae in the form [

The capacitance model study of a plane capacitor

maximum abscissae. Looking for the Performance capacitance simplifies to that of the X_{sc}(T) abscissa, because the value of X_{oc}(T) is negligibility compared to that of X_{sc}(T).

The solar cell photovoltage is given by Boltzmann’s equation:

where V_{T} is the thermal voltage, it is given as follows:

N_{b} is the doping rate and n_{i} is the minority charge carriers intrinsic density [

E_{g} is the energy gap, it corresponds to the difference between the energy of the conduction band E_{c} and the valence band E_{g}. E_{g} = 1.12 × 1.6 × 10^{−19} J; A is a constant. A = 3.87 × 10^{16} cm^{−3}∙K^{−3/2}.

Using the photovoltage expression, the solar cell capacitance is obtained as:

with

and

Equation (16) can be written as follows:

Taking into account the photovoltage expression and the minority carrier density, we get the following relation:

where

C_{0}(T) is the solar cell capacitance when operating under short circuit.

C_{d}(T, S_{f}) is the solar cell diffusion capacitance at temperature T, at a given operating point represented by S_{f}.

This curve (

1) The solar cell zone in open circuit, the recombination velocity is less than 2 × 10^{2} cm/s. There is a stability and maximum capacitance. So there is storage of minority carriers in the emitter-base junction.

2) The solar cell zone in short circuit, the upper junction recombination velocity is 4 × 10^{4} cm/s. low capacitance is reached. Then there is an important passage of minority charge carriers in the emitter-base junction.

The part between the open circuit and short circuit, the solar cell capacitance is decreasing. The latter is due to crossing of minority charge carriers in excess at the emitter-base junction.

When the solar cell is in open circuit (S_{f} < 2 × 10^{2} cm∙s^{−}^{1}), the temperature influence is more visible. The diffusion capacitance comes a bit, it is the temperature that affect through C_{0}(T). This capacitance C_{0}(T) decreases as the temperature increases. Low capacitance causes the narrowing of its thickness. This shrinkage is due at the motion of short circuit operating point.

The

In the limit of a minimum value X_{sc}(T) for abscissa T_{opt}, the solar cell capacitance has a linear decrease with temperature. This reduction takes place at temperatures below T_{opt}. The depletion zone extension is identical to the decreased of capacitance solar cell.

A large slope-related linear increases in capacitance. This increase occurs at temperatures higher than T_{opt}. This increase corresponds to the narrowing of the thickness X_{sc}(T). The optimum temperature provides a high performance capacitance.

The projection of the two tangents meeting point to the curve on the temperature axis provides T_{opt} Designing a solar cell capacitance theoretical model through the curve progression is given by [

with,

χ is determined from the intercept, it is equivalent to a capacitance,

γ is the slope with T^{γ} homogeneous to a capacitance.

The optimum temperature T_{opt} = 362 K and the corresponding yield is η = 0.999.

Zone | χ (F∙cm^{−2}) | γ |
---|---|---|

T < T_{opt} | 1.09 × 10^{−4} | −1.12 |

T > T_{opt} | 3.12 × 10^{−81} | 28.52 |

Capacitance efficiency dependence on X_{sc}(T) is shown in this study. X_{sc}(T) is the thickness of the solar cell space charge zone in short circuit. The explanation of the capacitance of the solar cell is used to determine the expression of C_{0}(T) and C_{d}(T, S_{f}).

Optimum temperature T_{opt} is defined by fluctuations of the solar cell capacitance in term of temperature. The optimum temperature provides a high performance capacitance. In the limit of a minimum value X_{sc}(T) for abscissa T_{opt}, the solar cell capacitance has a linear decrease with temperature. This reduction takes place at temperatures below T_{opt}. The space charge zone extension is identical to the solar cell capacitance decrease. However, the capacitance per unit length increase with temperature is observed. This increase occurs at temperatures higher than T_{opt}. This increase corresponds to the X_{sc} narrowing.

Ibrahima Diatta,Ibrahima Ly,Mamadou Wade,Marcel Sitor Diouf,Senghane Mbodji,Grégoire Sissoko, (2016) Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light. World Journal of Condensed Matter Physics,06,261-268. doi: 10.4236/wjcmp.2016.63024