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The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.

Experimental studies of the heating of the charge carriers by the strong electric field in inhomogeneous semiconductors began with thermopower measurements of hot charge carriers occurring at the p-n-junction. In [

[

In [

Under the influence of the electromagnetic wave, it increases the average energy of the carriers in the contact area with the metal-semiconductor interface. As a result, the potential barrier of electrons is heated by flowing current [

The aim of this work is to study electron heating and current rectification to contact in an alternating electromagnetic field.

We estimate the current arising under the influence of electromagnetic waves on a thin Schottky diode. If the wave period longer than the transit time of electrons through the barrier, on the basis of the theory of electron diode current passing through the barrier is given by:

where

incident wave, created by the barrier diode;

The average value of the diode current is determined by the following integral:

The values of the electron temperature are determined by the wave field strength.

At low wave power can not take into account the heating of the electrons, while the constant current arises only because of rectification:

Here

Detected voltage in the diode is given by:

It follows that the open circuit voltage at

Short-circuit current is the following:

Equation (5) defines the CVC diode situated in the field of the electromagnetic wave when the current occurs only through rectification of alternating current.

At high power microwave energy when

Using Formula (7) we will investigate the effect of electron heating in the CVC p-n-junction in a strong microwave field. CVC p-n-junction temperature change of the electrons is shown in

This shows that the inclusion of straightening and heating of electrons increases in the strong currents of the diode microwave field. The degree of increase of the current is determined by the following factor:

when

Now consider the short-circuit current of the Formula (7) (for

This shows that the inclusion of rectification increases the short circuit current by a factor of (8).

C using the Formula (9) is plotted as the short circuit current of the electron temperature (

For the open-circuit voltage of hot electrons from the Formula (7) (for

The first term of this formula gives emf, heated by the electron in the potential barrier [

Formula (10) allows to analyze graphically the dependence of

Analyze the second part of the Formula (10) is associated with straightening:

where

This formula shows that the dependence of

In [

The emergence of large values of EMF [

When the location of the p-n-junction in a microwave electromagnetic field is a redistribution of the field

Therefore, a strong microwave field in the calculation of EMF occurring at the p-n-junction in addition to the heating of electrons must be considered and straightening of the microwave power.

The expression for the effective electron temperature, calculated from Formulas (7)-(10) has the form:

Here

You can enter the ideality factor m in the following form:

The second term in the square brackets is due to the more effective temperature of the electrons due to rectification. When

The rectifying junction in the microwave electromagnetic field is always an electromotive force, which is due to electron heating and straightening microwave current. This is due to the distortion of the electric component of the microwave inside the p-n-junction. Distortion direction of the electric component of the microwave will cause the perpendicular component of the electric field that causes rectification of the microwave current through the p-n-junction. Heating of the electrons and the microwave current rectification increases the ideality factor of the diode.