Fang Yang, M. Wilkinson, E. J. Austin and K. P. O’Donnell, “Origin of the Stokes Shift A Geometrical Model of Exciton Spectra in 2D Semiconductors,” Physical Review Letters, Vol. 70, No. 3, 1993, pp. 323-326 (1993). - References

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Fang Yang, M. Wilkinson, E. J. Austin and K. P. O’Donnell, “Origin of the Stokes Shift: A Geometrical Model of Exciton Spectra in 2D Semiconductors,” Physical Review Letters, Vol. 70, No. 3, 1993, pp. 323-326 (1993).
http://dx.doi.org/10.1103/PhysRevLett.70.323

has been cited by the following article:

TITLE: Optical Spectra and Stokes Shift in Nanometric Quantum Wells

AUTHORS: Antonio A. P. Silva, Eliermes A. Meneses, Aurea R. Vasconcellos, Roberto Luzzi

KEYWORDS: Heterostructures; Non-Conventional Statistical Mechanics; Stokes Shift

JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.6A, October 24, 2013

ABSTRACT: We consider semiconductor heterostructures in nanometric quantum wells, which as a consequence of the growth process display at the rugged interfaces fractal characteristics, and largely influence optical and transport properties of the carriers system. The photoluminescence and excited photoluminescence spectra in such fractal conditions are theoretically analyzed, obtaining good agreement with the experimental results. The Stokes shift and linewidth are strongly dependent on the nonequilibrium thermomechanical-statistical state of the system. The Stokes shift has its origin in the presence of a gain region in the absorption spectrum, only present when the carriers system is in a statistical degenerate state.