M. M. Dumitrescu, M. J. Saarinen, M. D. Guina and M. V. Pessa, “High-Speed Resonant Cavity Light-Emitting Diodes at 650 nm,” IEEE Journal on Selected Topics in Quantum Electronics, Vol. 8, No. 2, 2002, pp. 219-230. doi:10.1109/2944.999174

has been cited by the following article:

• TITLE: Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

  AUTHORS: Jianjun Li, Tao Liu, Jiachun Li, Xuan Ya

  KEYWORDS: 650 nm; RCLED; MOCVD; DBR

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 23, 2013

  ABSTRACT: High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.