C.-S. Lin, M.-D. Tsai, H. Wang, Y.-C. Wang and C.-H. Chen, “A Monolithic HBT Broadband Amplifier Using Modified Triple Darlington Configuration,” 12th GAAS Symposium, Amsterdam, 2004, pp.331-334.

has been cited by the following article:

• TITLE: Design of Low Voltage, Low Power (IF) Amplifier Based-On MOSFET Darlington Configuration

  AUTHORS: Hassan Jassim Motlak

  KEYWORDS: N(IF) Amplifier; MOSFET Darlington Configuration; Dual-Input and Dual-Output (DIDO) IF Amplifier

  JOURNAL NAME: Circuits and Systems, Vol.4 No.3, June 26, 2013

  ABSTRACT: This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a MOSFET Darlington configuration is employed to reduce supply voltage (VDD) and DC consumption power (Pc). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (Pc) and the low total output noise is 12 nV with 1.2 V single supply voltage.