G. V. Lashkaryov, M. V. Radchenko, V. А.Karpina, V. I. Sichkovskii, “Diluted Magnetic Semiconductors as Materials for Spin Electronics,” Physics of the Low Temperature, Vol. 33, No. 2-3, 2007, pp. 228-238. (in Russian)

has been cited by the following article:

• TITLE: Spin Transfer in EuO:Fe/GaAs Contact

  AUTHORS: Arnold S. Borukhovich

  KEYWORDS: Spintronics; Magnetic Semi-Conduction; Spin Transfer

  JOURNAL NAME: Journal of Modern Physics, Vol.4 No.3, March 6, 2013

  ABSTRACT: Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.