T. Ghani, et al., “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors,” IEEE International Electron Devices Meeting, IEDM Technical Digest, Washington, 8-10 December 2003, pp. 978-980. - References

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T. Ghani, et al., “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors,” IEEE International Electron Devices Meeting, IEDM Technical Digest, Washington, 8-10 December 2003, pp. 978-980.

has been cited by the following article:

TITLE: Intervalley Scattering of Electrons in n-Si at T = 77 ÷ 450 K

AUTHORS: Valerii Ermakov, Volodymyr Kolomoets, Leonid Panasyuk, Baja Orasgulyev

KEYWORDS: Silicon; f-Transitions; g-Transitions; Tensoresistivity Effect; Uniaxial Strain

JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.3 No.1, February 27, 2013

ABSTRACT: The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f-transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.