N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin and A. M. Malyarenko, “Phase and Amplitude Response of the ‘0.7 Feature’ Caused by Holes in Silicon One-Dimensional Wires and Rings,” Journal of Physics: Condensed Matter, Vol. 20, 2008, Article ID: 164202.

has been cited by the following article:

• TITLE: Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells

  AUTHORS: Nikolay T. Bagraev, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Anna M. Malyarenko

  KEYWORDS: Quantum Conductance Staircase; Edge Channels; Silicon Nanosandwich; Odd and Even Fractional Values

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.11, November 23, 2012

  ABSTRACT: We present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the ultra-shallow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.