TITLE:
Structural and microstructural characteristics of B-doped PbTe semiconductor
AUTHORS:
Jovica N. Stojanovic
KEYWORDS:
B-doped PbTe semiconductor, the Rietveld method, microstructural measurements.
JOURNAL NAME:
Journal of Minerals and Materials Characterization and Engineering,
Vol.5 No.2,
October
20,
2006
ABSTRACT: The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural
measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.