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Varshni, Y. (1967) Temperature Dependence of the Energy Gap in Semi-Conductor. Physica, 34, 149-154.
https://doi.org/10.1016/0031-8914(67)90062-6

has been cited by the following article:

  • TITLE: Numerical Simulation of Varied Buffer Layer of Solar Cells Based on Cigs

    AUTHORS: Sampson Oladapo Oyedele, Boko Aka

    KEYWORDS: Numerical Simulation, CIGS Solar Cell, SCAPS-1D, Buffer Layer, Efficiency

    JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.7 No.3, July 30, 2017

    ABSTRACT: Numerical simulation has been used to investigate the effect of different bufferlayer components on the performance of CuInGaSe2solar cellswith SCAPS-1Dsoftware. The main photovoltaic parameters of simulated devices: open-circuitvoltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversionefficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. Thisresult is validated by experimental results(20%). At 300 K, when the thicknessofthe buffer layer (CdS, ZnS, ZnSe,InSe2) increases from 100 nm to 500nm,with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,with the other parameters maintainedconstant, both open circuit voltage and conversion efficiency also decrease.Theeffect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increasesof 3% than a single buffer CdS.