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Nishiguchi, K., Castellanos-Gomez, A., Yamaguchi, H., et al. (2015) Observing the Semiconducting Band-Gap Alignment of MoS2 Layers of Different Atomic Thicknesses Using a MoS2/SiO2/Si Heterojunction Tunnel Diode. Applied Physics Letters, 107, Article ID: 053101.
https://doi.org/10.1063/1.4927529

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