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Leitner, T., Feiningstein, A., Turchetta, R., Coath, R., Chick, S., Vi-sokolov, G., Savuskan, V., Javitt M., Gal, L., Brouk, I., Bra-Lev, S. and Nemirovsky, Y. (2013) Measurements and Simulations of Low Dark Count Rate Single Photon Avalanche Diode Device in a Low Voltage 180-nm CMOS Image Sensor Technology. IEEE Transactions on Electron Devices, 60, 1982-1988.
https://doi.org/10.1109/TED.2013.2259172
has been cited by the following article:
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TITLE:
High-Performance Structure of Guard Ring in Avalanche Diode for Single Photon Detection
AUTHORS:
Wei Wang, Yu Zhang, Zhenqi Wei
KEYWORDS:
Avalanche Photon Diode, Guard Ring, Premature Edge Breakdown, Maximum Bias Voltage, Single Photon Detection
JOURNAL NAME:
International Journal of Communications, Network and System Sciences,
Vol.10 No.8B,
August
14,
2017
ABSTRACT:
Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
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