I. G. Atabaev, T. M. Saliev and E. N. Bakhranov, “Method of Diffusion of Boron in Silicon Carbide,” Patent of Uzbekistan IDP 05199.

has been cited by the following article:

• TITLE: Influence of Defects on Low Temperature Diffusion of Boron in SiC

  AUTHORS: Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky

  KEYWORDS: Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.9, September 20, 2011

  ABSTRACT: The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.