TITLE:
Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy
AUTHORS:
Dominik Lausch, Christian Hagendorf
KEYWORDS:
Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy
JOURNAL NAME:
Microscopy Research,
Vol.2 No.1,
January
22,
2014
ABSTRACT:
In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.