TITLE:
Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
AUTHORS:
Gang Chen, Song Bai, Yonghong Tao, Yun Li
KEYWORDS:
4H-SiC; VJFET; Ohmic; Trench; Implant
JOURNAL NAME:
Energy and Power Engineering,
Vol.5 No.4B,
November
18,
2013
ABSTRACT:
A silicon carbide (SiC) vertical channel junction field
effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer
with trenched and implanted method. Its forward drain current is in excess of 3.12 A
(170 W/cm2) with a current gain of ID/IG = 19746
at gate bias VG = 3 V and drain bias VD = 5.5 V. The
SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The
BV gain is 250 V with Vg from -10 V to -4 V and is
350 V with Vg from -4 V to -2 V. Self-aligned
floating guard rings provide edge termination that blocks 3180V at a gate bias
of ?14 V and a drain-current density of 1.53 mA/cm2.