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P. R. Griffin, J. Barnes, K. W. J. Barnham, G. Haarpaintner, M. Mazzer, C. Zanotti-Fregonara, E. Grunbaum, C. Olson, C. Rohr, J. P. R. David, J. S. Roberts, R. Gray and M. A. Pate, “Effect of Strain Relaxation on Forward Bias Dark Currents in GaAs/InGaAs Multiquantum Well p-i-n Diodes,” Journal of Applied Physics, Vol. 80, No. 10, 1996, pp. 5815-5820. doi:10.1063/1.363574

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