A. C. Tuan, J. D. Bryan, A. B. Pakhomov, V. Shutthanandan, S. Thevuthasan, D. E. McCready, D. Gaspar, M. H. Engelhard, J. W. Rogers Jr., K. Krishnan, D. R. Gamelin and S. A. Chambers, “Epitaxial Growth and Properties of Cobalt-Doped ZnO on α-Al2O3 Single-Crystal Substrates,” Physical Review B, Vol. 70, No. 5, 2004, Article ID: 054424. doi:10.1103/PhysRevB.70.054424

has been cited by the following article:

• TITLE: XANES and XPS Study on Microstructure of Mn-Doped ZnO Films

  AUTHORS: B. Zhang, M. Li, J. Z. Wang, L. Q. Shi, H. S. Cheng

  KEYWORDS: ZnO-Based DMS; Mn Substitution; XANES; XPS

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.5, May 21, 2013

  ABSTRACT: Microstructure of ZnO:Mn films with various Mn concentration was investigated with XANES and XPS. The experimental results revealed a substitution of Mn in ZnO and also excluded the existence of Mn oxides or metallic manganese clusters. The substitutional Mn presented a divalent state and all the ZnO:Mn films were n-type. Room temperature ferromagnetism monotonously decreases with the decrease of the electron carrier concentration. The observed ferrmagnetism should come from the carrier-mediated exchange.