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M. Fujihira, L. M. Do, A. Koike and E. M. Han, “Growth of Dark Spots by Interdiffusion across Organic Layers in Organic Electroluminescent Devices,” Applied Physics Letters, Vol. 68, No. 13, 1996, pp. 1787. doi:10.1063/1.116667

has been cited by the following article:

  • TITLE: Effect of Pixellization on Efficiency and Stability of MEH-PPV Based Polymer Light-Emitting Diodes

    AUTHORS: Ranbir Singh, Monica Katiyar

    KEYWORDS: Organic Light-Emitting Diodes; Pixellization; Isolation Layer; Electroluminescence Quantum Efficiency

    JOURNAL NAME: Journal of Encapsulation and Adsorption Sciences, Vol.2 No.1, March 30, 2012

    ABSTRACT: Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator layer is introduced between the indium tin oxide and organic layer to define the area of the active device. Here, we have inserted a layer of photoresist (thickness ~ 200 nm) at the edge of patterned anode (indium tin oxide) and between the anode and hole transport layer (Poly 3, 4-ethylenedioxythiophene poly styrenesulfonate) to examine its effect on the leakage current of organic light-emitting diode and on the electron-hole recombination ratio in the emission area, as a result increasing the luminance efficiency. Current leakage causes the loss of charges, which adversely affects the recombination of electrons and holes in the emitting zone and results in poorer luminance efficiency. In this paper, we report the effect of pixellization on current density-voltage, luminescence-voltage and degradation behavior of single layer Poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylene vinylene] based organic light-emitting diodes. Devices with isolation layer have 30% higher external electroluminescence quantum efficiency and reduced device degradation in comparison to without isolation layer.