J. J. Yon, K. Barla, R. Herino and Bomchil, “The Kinetics and Mechanism of Oxide Layer Formation from Porous Silicon Formed on P-Si Substrates,” Journal of Applied Physics, Vol. 62, No. 3, 1987, pp. 1042-1048. doi:10.1063/1.339761

has been cited by the following article:

• TITLE: Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method

  AUTHORS: Amaria Ould-Abbas, Mama Bouchaour, Nasr-Eddine Chabane Sari

  KEYWORDS: Mono-Crystal Silicon; Porous Silicon; Thermal Conductivity; Micro-Raman Spectroscopy

  JOURNAL NAME: Open Journal of Physical Chemistry, Vol.2 No.1, February 27, 2012

  ABSTRACT: In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.