Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.

 

Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
   
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations

More>>

Dzarnoski, J., et al. (1982) Shock-Induced Kinetics of the Disilane Decomposition and Silylene Reactions with Trimethylsilane and Butadiene. Organometallics, 1, 1217-1220.

has been cited by the following article:

  • TITLE: Run-Away Energetic Reactions in the Exhaust of Deposition Reactors

    AUTHORS: Yen-Hsun Chang, Jivaan Kishore, Farhang Shadman

    KEYWORDS: Energetic Events, Energetic Material, Process Stimulation Model

    JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.9 No.2, April 30, 2019

    ABSTRACT: A model is developed to simulate the processes that may cause run-away exothermic reactions in the downstream of typical deposition reactors used in semiconductor manufacturing. This process model takes into account various modes of mass and heat transport as well as chemical reactions and provides insight into the key mechanisms that trigger the uncontrolled energetic reactions and cause the formation of potentially damaging hotspots. Using the developed model, a parametric study was conducted to analyze the effects of various system and operating conditions. In particular, the effects of the gaseous reactants concentrations and incoming temperature, the extent of accumulation of deposits, and the gas flow rate, and the reactions activation energy and heat of reaction are analyzed and the location and time of hot spot formation for each case are determined. The results are useful in developing strategies for mitigating the occurrence of the damaging energetic events.