Article citationsMore>>

Hofstetter, D., Bau-mann, E., Giorgetta, F.R., Theron, R., Wu, H., Schaff, W.J., Dawlaty, J., George, P.A., Eastman, L.F., Rana, F., Kandaswamy, P.K., Leconte, S. and Monroy, E. (2010) Intersubband Transition-Based Processes and Devices in AlN/ GaN-Based Heterostructures. Proceedings of the IEEE, 7. https://doi.org/10.1109/JPROC.2009.2035465

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
Free SCIRP Newsletters
Copyright © 2006-2021 Scientific Research Publishing Inc. All Rights Reserved.
Top