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Article citations


Li, J.C., Li, J.J., Liu, T., Cui, B.F., Deng, J., Han, J., He, H.J. and Lin, S.J. (2013) The Study of Relaxation Time in Test of 940 nm. Journal of Computer and Communications, 1, 46-49. http://dx.doi.org/10.4236/jcc.2013.17011

has been cited by the following article:

  • TITLE: An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode

    AUTHORS: Yiru Liao, Jianjun Li, Guoxin Mi, Haikuo Wang, Yuancheng Wang, Jun Deng, Jun Han

    KEYWORDS: 940 nm Semiconductor Laser, Threshold Current, Characteristic Temperature

    JOURNAL NAME: Optics and Photonics Journal, Vol.6 No.8B, August 25, 2016

    ABSTRACT: This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.