SCIRP Mobile Website

Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.

 

Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
   
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations

More>>

Seitz, F. and Koehler, J. (1956) Solid State Physics, 2, 307-442.

has been cited by the following article:

  • TITLE: Clusters of Radiation Defects in Silicon Crystals

    AUTHORS: Hrant N. Yeritsyan, Aram A. Sahakyan, Norair E. Grigoryan, Vachagan V. Harutunyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan

    KEYWORDS: Clusters of Radiation Defects, Point Radiation Defects, Irradiation Dose, Irradiation Energy, Semiconductors, Silicon

    JOURNAL NAME: Journal of Modern Physics, Vol.6 No.9, August 13, 2015

    ABSTRACT: While considerable progress has been achieved in radiation influence on the solid states, the quantitative assessment of defect production is very scarce. In this paper radiation defects studies in silicon crystals are briefly reviewed and comprehensively analyzed depending on irradiation energy and dose, paying special attention to electron irradiation in wide energy spectrum when crystal lattice disordered regions (clusters) occur. Electron irradiation, which is a simple way to introduce intrinsic defects, was used as one of the most powerful techniques to study point and cluster defects which affect properties of semiconductors depending on irradiation energy. Fundamental aspects of radiation induced defects are discussed and it is shown that they bring information on the threshold energy for atomic displacement, on the recombination of vacancy—interstitial pair and mainly, on radiation defects cluster formation which essentially influences on the irradiating material properties. The determination of the irradiation critical dose and energy for the formation of homogeneous disordered regions (clusters) are detailed.