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Khan, M.A., Shur, M.S., et al. (1995) Temperature Activated Conductance in GaN/AlGa Nheterostructure Field Effect Transistors Operating at Temperatures up to 300°C. Applied Physics Letters, 66, 1083-1085.
http://scitation.aip.org/content/aip/journal/apl/66/9/10.1063/1.113579

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