RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

Luong Thi Kim Phuong

Hong Duc University, Thanh Hoa City, Vietnam.

DOI: 10.4236/opj.2017.75007                

Abstract

Short Retraction Notice

This article has been retracted to straighten the academic record. In making this decision the Editorial Board follows COPE's Retraction Guidelines. The aim is to promote the circulation of scientific research by offering an ideal research publication platform with due consideration of internationally accepted standards on publication ethics. The Editorial Board would like to extend its sincere apologies for any inconvenience this retraction may have caused.

Please see the article page for more details. The full retraction notice in PDF is preceding the original paper which is marked "RETRACTED".

Keywords

Heavy N-Doping, Germanium, Dopant Distribution, GaP Source, Optoelectronic Application

Conflicts of Interest

The authors declare no conflicts of interest.

References

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