Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
Viranjay M. Srivastava, K. S. Yadav, G. Singh
DOI: 10.4236/ijcns.2011.49071   PDF    HTML     6,279 Downloads   11,056 Views   Citations


To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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V. Srivastava, K. Yadav and G. Singh, "Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch," International Journal of Communications, Network and System Sciences, Vol. 4 No. 9, 2011, pp. 590-600. doi: 10.4236/ijcns.2011.49071.

Conflicts of Interest

The authors declare no conflicts of interest.


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