On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices
G. E. Zardas, C. J. Aidinis, E. A. Anagnostakis, Ch. I. Symeonides
DOI: 10.4236/ojm.2011.12006   PDF    HTML     3,552 Downloads   8,366 Views   Citations


The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.

Share and Cite:

Zardas, G. , Aidinis, C. , Anagnostakis, E. and Symeonides, C. (2011) On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices. Open Journal of Microphysics, 1, 32-34. doi: 10.4236/ojm.2011.12006.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] E. A. Anagnostakis, “Characterisation of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity,” Physica Status Solidi A, Vol. 126, No. 2, 1991, pp. 397-410. doi:10.1002/pssa.2211260211
[2] D. E. Theodorou and E. A. Anagnostakis, “Persistent Photoconductivity and DX Centres,” Physical Review B Vol. 44, 1991, pp. 3352-3354. doi:10.1103/PhysRevB.44.3352
[3] E. A. Anagnostakis, “Photoconductive Response of GaAs Epitaxial Layers,” Applied Physics A, Vol. 54, No. 1, 1992, pp. 68-71. doi:10.1007/BF00348133
[4] E. A. Anagnostakis, “Determination of Persistent Photoconductivity within Semiconductor Epitaxial Layers by Photoconductive Gain,” Physical Review B, Vol. 46, No. 12, 1992, pp. 7593-7595. doi:10.1103/PhysRevB.46.7593
[5] E. A. Anagnostakis, “On a Scheme of Nanoheterointerfacial Intersub-Band 15-THz Luminescence,” Physica B Vol. 405, No. 1, 2010, pp. 25-28. doi:10.1016/j.physb.2009.08.010
[6] E. A. Anagnostakis, “Optoelectronic Nanoheterointerface Functional Eigenstate Photodynamics,” Physica B, Vol. 405, No. 1, 2010, pp. 38-40. doi:10.1016/j.physb.2009.08.002
[7] E. A. Anagnostakis and D. E. Theodorou, “Semiconductor Heterointerface Characterisation via Effective Harmonic Oscillator Simulation,” Physica Status Solidi B, Vol. 188, No. 2, 1995, pp. 689-695. doi:10.1002/pssb.2221880212
[8] J. Singh, “Semiconductor Optoelectronics,” Mc Graw- Hill, Series in Electrical and Computing Engineering, Singapore, 1995, Chapter 6.
[9] G. E. Zardas, P. H. Yannakopoulos, Ch. I. Symeonides, and P. C. Euthymiou, “Persistent Photoconductivity in an InP: Fe Single Layer Structure a 10-pound note at Room Temperature,” Materials Science: Poland, Vol. 23, 2005, pp. 985-988.

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.