Electronic Transport Study of ZnTe and ZnSe


The transport properties of electrons in ZnTe and ZnSe are of great interest because of their numerous technological applications. This paper investigates several calculation results of Monte Carlo device simulation. The average quantities directly accessible by the simulation are the drift velocity, the carriers’ energy and diffusion. The method we choosed to study the transport phenomena uses a three valley model (Γ, L, X) non-parabolic. The results have been obtained by applying the electric field in the direction <100>. Finally we compared our results with those obtained previously.

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Khedim, S. , Sari, N. , Benyoucef, B. and Bouazza, B. (2011) Electronic Transport Study of ZnTe and ZnSe. Materials Sciences and Applications, 2, 364-369. doi: 10.4236/msa.2011.25047.

Conflicts of Interest

The authors declare no conflicts of interest.


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