[1]
|
J. L. Zhao, X. M. Li, J. M. Bian, W. D. Yu and X. D. Gao, “Structural, Optical and Electrical Properties of ZnO Films Grown by Pulsed Laser Deposition (PLD),” Journal of Crystal Growth, Vol. 276, No. 3-4, 2005, pp. 507-512. doi:10.1016/j.jcrysgro.2004.11.407
|
[2]
|
K. Shin, K. Prabakar, W.-P. Tai, J.-H. OH and C. Lee, “The Structure and Photoluminescence Properties of Al: ZnO/Porous Silicon,” Journal of the Korean Physical Society, Vol. 45, No. 5, 2004, pp. 1288-1291.
|
[3]
|
N.-H. Kim and H.-W. Kim, “Room Temperature Growth of Zinc Oxide Films on Si Substrates by the RF Magnetron Sputtering,” Materials Letters, Vol. 58, No. 6, 2004, pp. 938-943. doi:10.1016/j.matlet.2003.07.040
|
[4]
|
S.-K. Hong, T. Hanada, H. Ko, Y. Chen, T. Yao, D. Imai, K. Arak, M. Shinohara, K. Saitoh and M. Terauchi, “Control of Crystal Polarity in a Wurtzite Crystal: ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy on GaN,” Physical Review B, Vol. 65, No. 11, 2002, pp. 115331-115341. doi:10.1103/PhysRevB.65.115331
|
[5]
|
M.-Y. Han and J.-H. Jou, “Determination of the Mechanical Properties of r.f.-Magnetron-Sputtered Zinc Oxide Thin Films on Substrates,” Thin Solid Films, Vol. 260, No. 1, 1995, pp. 58-64.
doi:10.1016/0040-6090(94)06459-8
|
[6]
|
A. Mang, K. Reimann and St. Rübenacke, “Band Gaps, Crystal-Field Splitting, Spin-Orbit Coupling, and Exciton Binding Energies in ZnO under Hydrostatic Pressure,” Solid State Communications, Vol. 94 , No. 4, 1995, pp. 251-254. doi:10.1016/0038-1098(95)00054-2
|
[7]
|
D. P. Norton, Y. W. Heo, M. P. Ivill, K. Ip, S. J. Pearton, M. F. Chisholm and T. Steiner, “ZnO: Growth, Doping & Processing,” Materials Today, Vol. 7, No. 6, 2004, pp. 34-40. doi:10.1016/S1369-7021(04)00287-1
|
[8]
|
L. R. Doolittle, “Algorithms for the Rapid Simulation of Rutherford Backscattering Spectra,” Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 9, No. 3, 1985, pp. 344-351.
doi:10.1016/0168-583X(85)90762-1
|
[9]
|
X. Chen, W. Guan, G. Fang and X. Z. Zhao, “Influence of Substrate Temperature and Post-Treatment on the Properties of ZnO: Al Thin Films Prepared by Pulsed Laser Deposition,” Applied Surface Science, Vol. 252, No. 5, 2005, pp. 1561-1567. doi:10.1016/j.apsusc.2005.02.137
|
[10]
|
F. K. Shan, B. C. Shin, S. W. Jang and Y. S. Yu, “Substrate Effects of ZnO Thin Films Prepared by PLD Technique,” Journal of the European Ceramic Society, Vol. 24, No. 6, 2004, pp. 1015-1018.
doi:10.1016/S0955-2219(03)00397-2
|
[11]
|
K. L. Chopra, S. Major and D. K. Pandya, “Transparent Conductors—A Status Review,” Thin Solid Films, Vol. 102, No. 1, 1983, pp. 1-46.
doi:10.1016/0040-6090(83)90256-0
|
[12]
|
S. K. Nandi, S. Chakraborty, M. K. Bera and C. K. Maiti, “Structural and Optical Properties of ZnO Films Grown on Silicon and Their Applications in MOS Devices in Conjunction with ZrO2 as a Gate Dielectric,” Bulletin of Materials Science, Vol. 30, No. 3, 2007, pp. 247-254.
doi:10.1007/s12034-007-0044-3
|
[13]
|
S. Lemlikchia, S. Abdelli-Messaci, S. Lafane, T. Kerdja, A. Guittoum and M. Saad, “Study of Structural and Optical Properties of ZnO Films Grown by Pulsed Laser Deposition,” Applied Surface Science, Vol. 256, No. 18, 2010, pp. 5650-5655. doi:10.1016/j.apsusc.2010.03.026
|
[14]
|
R. Vinodkumar, I. Navas, S. R. Chalana, K. G. Gopchandran, V. Ganesan, R. Philip, S. K. Sudheer and V. P. M. Pillai, “Highly Conductive and Transparent Laser Ablated Nanostructured Al: ZnO Thin Films,” Applied Surface Science, Vol. 257, No. 3, 2010, pp. 708-716.
doi:10.1016/j.apsusc.2010.07.044
|
[15]
|
B. D. Ngom, T. Mpahane, N. Manyala, O. Nemraoui, U. Buttner, J. B. Kana, A. Y. Fasasi, M. Maaza and A. C. Beye, “Structural and Optical Properties of Nano-Structured Tungsten-Doped ZnO Thin Films Grown by Pulsed Laser Deposition,” Applied Surface Science, Vol. 255, No. 7, 2009, pp. 4153-4158.
doi:10.1016/j.apsusc.2008.10.122
|
[16]
|
C. Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta and T. Hirao, “Effects of Substrate on the Structural, Electrical and Optical Properties of Al-Doped ZnO Films Prepared by Radio Frequency Magnetron Sputtering,” Thin Solid Films, Vol. 517, No. 11, 2009, pp. 3265-3268.
doi:10.1016/j.tsf.2008.11.103
|
[17]
|
L. Wang, L. Meng, V. Teixeira, S. Song, Z. Xu and X. Xu, “Structure and Optical Properties of ZnO:V Thin Films with Different Doping Concentrations,” Thin Solid Films, Vol. 517, No. 13, 2009, pp. 3721-3725.
doi:10.1016/j.tsf.2008.12.043
|
[18]
|
D. Raoufi and T. Raoufi, “The Effect of Heat Treatment on the Physical Properties of Sol-Gel Derived ZnO Thin Films,” Applied Surface Science, Vol. 255, No. 11, 2009, pp. 5812-5817. doi:10.1016/j.apsusc.2009.01.010
|
[19]
|
A. Sarkar, S. Ghosh, S. Chandhuri and A. K. Pal, “Studies on Electron Transport Properties and the Burstein-Moss Shift in Indium-Doped ZnO Films,” Thin Solid Films, Vol. 204, No. 2, 1991, PP. 255-264.
doi:10.1016/0040-6090(91)90067-8
|
[20]
|
D. M. Carballeda-Galicia, R. Castanedo-Pérez, O. Jiménez-Sandoval, S. Jiménez-Sandoval, G. Tores-Dalgado and C. L. Zuniga-Romero, “High Transmittance CdO Thin Films Obtained by the Sol-Gel Method,” Thin Solid Films, Vol. 371, No. 1-2, 2000, pp. 105-108.
doi:10.1016/S0040-6090(00)00987-1
|