Multi-Bias Model for Power Diode Using a Very High Description Language
Hassene Mnif, Montassar Najari, Hekmet Samet, Nouri Masmoudi
DOI: 10.4236/epe.2010.23029   PDF    HTML     4,877 Downloads   8,779 Views   Citations


This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer® Environment.

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H. Mnif, M. Najari, H. Samet and N. Masmoudi, "Multi-Bias Model for Power Diode Using a Very High Description Language," Energy and Power Engineering, Vol. 2 No. 3, 2010, pp. 196-202. doi: 10.4236/epe.2010.23029.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] C. L. Ma and P. O. Lauritzen, “Simple Power Diode Mo- del with Forward and Reverse Recovery,” IEEE Transactions on Power Electronics, Vol. 8, No. 4, 1993, pp. 342- 346.
[2] M. Najjari, H. Mnif, H. Samet and N. Masmoudi, “New Modeling of the Power Diode Using the VHDL-AMS Language,” The European Physical Journal Applied Phy- sics, Vol. 4, No. 1, 2008, pp. 1-11.
[3] H Zhang and J.A. Pappas, “A Moving Boundary Diffusion Model for PIN Diodes,” IEEE Transactions on Mag- net, Vol. 37, No. 1, 2001, pp. 406-410.
[4] P. Antognetti and G. Massobrio, “Semiconductor Device Modeling with SPICE,” MCGraw-Hill Inc, New York, 1988.
[5] C. L. Ma and P. O. Lauritzen, “Modeling of Diodes with the Lumped-charge Modeling Technique,” IEEE Transactions on Power Electronics, Vol. 12, No. 3, 1997, pp. 398-405.
[6] K. X. A. Caiafa, E. Santi, J. L. Hudgins and P. R. Palmer, “Parameter Extraction for a Power Diode Circuit Simulator Model Including Temperature Dependent Effects,” 17th Annual IEEE Applied Power Electronics Conference and Exposition, Dallas, March 2002, pp. 452-458.
[7] BYT12 600 Datasheet, “Datasheet Archive,” 1998. http://
[8] H. Garrab, B. Allard, H. Morel, K. Ammous, S. Ghedira, et al., “On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter,” IEEE Transactions on Power Electronics, Monastir, Vol. 20, No. 3, May 2005, pp. 660-670.
[9] N. Mohan, T. M. Undeland and W. R. Robbins, “Power Electronics: Converters, Applications and Design,” 2nd Edition, John Wiley & Sons, New York, 1995.
[10] R.W. Erickson and D. Maksimovic, “Fundamentals of Power Electronics,” 2nd Edition, Kluwer Academic Pulishers, Berlin, 2001.

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