Influence of Sputter Deposition Time on the Growth of c-Axis Oriented AlN/Si Thin Films for Microelectronic Application


Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.

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VasanthiPillay, V. and Vijayalakshmi, K. (2012) Influence of Sputter Deposition Time on the Growth of c-Axis Oriented AlN/Si Thin Films for Microelectronic Application. Journal of Minerals and Materials Characterization and Engineering, 11, 724-729. doi: 10.4236/jmmce.2012.117059.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] B. Mednikarov, G. Spasov, Tz. Babeva, Aluminum nitride layer prepared by Dc/RF magnetron sputtering, Journal of Optoelectronics and Advanced Materials, Vol. 7, No. 3, June 2005, p.1421-1427
[2] T. P. Drusedau, J. Blasing, Optical and structural properties of highly c-axis oriented aluminum nitride prepared by sputter-deposition in pure nitrogen, Thin Solid Films 377-378, (2000) 27.
[3] X. H. Ji, S. P. Lau, G. Q. Yu, W. H. Zhong, B. K. Tay, Structural properties and nanoindentation of AlN films by a filtered cathodic vacuum arc at low temperature, J. Phys. D: Appl. Phys. 37, (2004) 1472
[4] M.Clement, L.Vergara, J.Sangardor, E.Iborra, A.Sanz-Herras, SAW Characteristics of AlN films sputtered on silicon substrates, Ultrasonic 42 (2004) 403.
[5] T.Palacios, F.Calle, E.Monroy, J.Grajal, M.Eickhoff, O.Ambacher, C.Prieto, Nanotechnology for SAW devices on AlN epilayers, Mat.Sci.Eng.B93 (2000) 154.
[6] H.Gong, X.Jiang, C-axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma enhanced chemical vapour depositon.J.Crystal Growth 235 (2000) 1.
[7] A.J.Shuskus, T.M.Reeder, E.L.Paradis, Rf-sputtered aluminum nitride films on sapphire, Appl.Phys.Lett.24 (4) (1974) 155.
[8] M.Ishihara, K.Yamamoto, F.Kokai,Y.Koga, Aluiminum nitride thin films prepared by radical –assisted pulsed laser deposition, Vaccum 59(2-3)(2000) 649.
[9] L.Huang, X.D.Wang, K.W.Hipps, U.Mazur, R.Heffron, J.T.Dickinson, Chemical etching of ion beam deposited AlN and AlN: H, thin Solid Films 279(1-2) (1996) 43.
[10] M.M.D.Ramos, J.B.almeida, M.i.C.Ferrerira, M.P.D.Santos, Thin film deposition by magnetron sputtering and determination of some physical parameters, Thin Solid Films 176 (1989) 219.
[11] J.Huang, L.Wang, Q.Shen.C.Lin, O.Milae; Preparation of AlN films by nitridation of Al coated Si sunstrate, Thin Solid films 340 (1999) 137.
[12] V.Dimitrova, D.Monova, T.Paskova, TZ.Uzunov, N.Lvanoc, D.Dechev, Vaccum 51 Aluminum nitride thin films deposited by DC reactive magnetron sputtering, (1998) 161.
[13] M.Ishihara, K.Yamamoto, F.Kokai, Y.Koga, Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition, Jpn JAppl Phys 2001; 40:575.
[14] H.Cheng, Y.Sun, J.X.Zhang, S.Yuan, P.Hing, AlN films deposited under various nitrogen concentrations by RF reactive Sputtering, Journal of Crystal Growth 254 (2003) 46.
[15] X.H.Xu, C.J.Zhang, Z.H.Jin, Morphological properties of AlN piezoelectric thin films deposited by Dc reactive magnetron sputtering Thin Solid Films 388 (2001) 62.
[16] Z.Q.Yao, Y.Q.Li, J.X. Tang, W.J.Zhang, S.T.Lee, Growth and Photoluminescence studies of AlN thin films with different orientation degrees, Diamond and Related Materials 17 (2008) 1785
[17] V.dimitrova, D.Manova, E.Valcheva, Optical and dielectric properties of DC magnetron sputtered AlN thin films correlated with deposition conditions, Mat.sci.Eng.B68 (1999) 1-4.
[18] K.Jagannadham, A.K.Sharma, Q.Wei, R.Kalayanraman, J.Narayan, J.Vac. Sci. Technol., A, Vac. Surf. Films 16 (1998) 2804
[19] T. Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt, 175-176 (2001) 428-435.

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