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Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3

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DOI: 10.4236/jemaa.2011.39056    3,797 Downloads   6,587 Views   Citations

ABSTRACT

In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

S. Taya, T. El-Agez and A. Alkanoo, "Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3," Journal of Electromagnetic Analysis and Applications, Vol. 3 No. 9, 2011, pp. 351-358. doi: 10.4236/jemaa.2011.39056.

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