Effect of Calcinations Temperature on Crystallography and Nanoparticles in ZnO Disk

Urai Seetawan, Suwit Jugsujinda, Tosawat Seetawan, Ackradate Ratchasin, Chanipat Euvananont, Chabaipon Junin, Chanchana Thanachayanont, Prasarn Chainaronk

.

DOI: 10.4236/msa.2011.29176                

Abstract

We proposed a good calcinations condition of the ZnO disk to control the crystallography and nanoparticles in ZnO disk. The crystallography of precursor powder and disk powder were analyzed by the X-ray diffraction (XRD). The mean nanoparticles of ZnO disk was determinate by XRD results and observed by scanning electron microscope. The temperature ranges of 400℃ to 650℃ in air for 30 minutes were used calcinations ZnO disk. These temperature can be controlled the single phase, lattice parameters, unit cell volume, crystalline size, d-value, texture coefficient and bond lengths of Zn–Zn, Zn–O and O–O which correspond significantly the hexagonal crystal structure. The nanoparticles were small changed mean of 76.59 nm at the calcinations temperature range.

Keywords

Nanoparticles in ZnO Disk, Calcinations Temperature, Crystallography of ZnO

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	D. Xu, X. F. Shi, X. N. Cheng, J. Yang, Y. E. Fan, H. M. Yuan and L. Y. Shi, “Microstructure and Electrical Properties of Lu2O3–Doped ZnO–Bi2O3–Based Varistor Ceramics,” Transactions of Nonferrous Metals Society of China, Vol. 20, No. 12, December 2010, pp. 2303-2308. doi:10.1016/S1003-6326(10)60645-0
[2]	N. Hagura, T. Ogi, T. Shirahama, F. Iskandar and K. Okuyama, “Highly luminescent Silica–Coated ZnO Nano- particles Dispersed in Anaqueousmedium,” Journal of Luminescence, Vol. 131, No. 5, May 2011, pp. 921-925. doi:10.1016/j.jlumin.2010.12.024
[3]	C. Li, S. Zhang, M. Hu and C. Xie, “Nanostructural ZnO Based Coplanar Gas Sensor Arrays from the Injection of Metal Chloride Solutions: Device Processing, Gas-Sens- ing Properties and Selectivity in Liquors Applications,” Sensors and Actuators B, Vol. 153, No. 2, April 2011, pp. 415-420. .doi:10.1016/j.snb.2010.11.008
[4]	A. P. Popov, A. V. Priezzhev, J. Lademann and R. Myllyl?, “Alteration of Skin Light–Scattering and Absorption Properties by Application of Sunscreen Nanoparticles: A Monte Carlo Study,” Journal of Quantitative Spectroscopy & Radiative Transfer, 2011, Article in Press.
[5]	X. Qu, W. Wang, S. Lva and D. Jia, “Thermoelectric Properties and Electronic Structure of Al–Doped ZnO,” Solid State Communications, Vol. 151, No. 4, February 2011, pp. 332-336. doi:10.1016/j.ssc.2010.11.020
[6]	C. Chen, B. Yu, J. Liu, Q. Dai and Y. Zhu, “Investigation of ZnO Films on Si(111) Substrate Grown by Low Energy O+ Assisted Pulse Laser Deposited Technology,” Material Letters, Vol. 61, No. 14-15, June 2007, pp. 2961-2964.
[7]	D. P. Padiyan and A. Marikani, “X–Ray Determination of Lattice Constants of CdXSn1–XSe Mixed Crystal Systems,” Crystal Research and Technology, Vol. 37, No. 11, November 2002, pp. 1241-1248. doi:10.1002/1521-4079(200211)37:11<1241::AID-CRAT1241>3.0.CO;2-C
[8]	C. S. Barret, T. B. Massalski, “Structure of Metals,” Pergamon Press, Oxford, 1980.
[9]	Joint Committee on Powder Diffraction Standards, Powder Diffraction File, Card No: 891397.
[10]	H. Schulz and K.H. Thiemann, “Structure Parameters and Polarity of the Wurtzite Type Compounds Sic–2H and ZnO,” Solid State Communications, Vol. 32, No. 9, December 1997, pp. 783-785.
[11]	S. Aksoy, Y. Caglar, S. Ilican and M. Caglar, “Effect of Deposition Temperature on the Crystalline Structure and Surface Morphology of ZnO Films Deposited on p–Si,” Advances in Control, Chemical Engineering, Civil Engineering and Mechanical Engineering, ISBN: 978–960–474–251–6, pp. 227-231.
[12]	H. Adachi, M. Tsukada and C. Satoko, “Discrete Variational Xα Cluster Calculations. I. Application to Metal Clusters,” Journal of the Physics Society of Japan, Vol. 45, April 1978, pp. 875-883.
[13]	C. Kittel, “Introduction to Solid State Physics,” 8th Edition, John Wiley & Sons, New York, 2005.
[14]	R. Chowdhury, P. Rees, S. Adhikari, F. Scarpa and S. P. Wilks, “Electronic Structures of Silicon Doped ZnO,” Physica B, Vol. 405, No. 8, April 2010, pp. 1980-1985. doi:10.1016/j.physb.2010.01.084
[15]	S. Panpan, S. Xiyu, H. Qinying, L. Yadong and C. Wei, “First–Principles Calculation of the Electronic Band of ZnO Doped with C,” Journal of Semiconductors, Vol. 30, No. 5, May 2009, pp. 052001–1–052001–4.
[16]	E. H. Kisi and M. M. Elcombe, “u Parameters for the Wurtzite Structure of ZnS and ZnO Using Powder Neutron Diffraction,” Acta Crystallographica Section C– Crystal Structure Communications Vol. 45, No. 12, December 1989, pp. 1867-1870.
[17]	J. L. Lyons, A. Janotti and C. G. Van de Walle, “Role of Si and Ge as Impurities in ZnO,” Physical Review B, Vol. 80, No. 20, November 2009, pp. 205113-2051117. doi:10.1103/PhysRevB.80.205113
[18]	C. S. Barret and T. B. Massalski, “Structure of Metals,” Pergamon Press, Oxford, 1980.
[19]	S. Ilican, M. Caglar and Y. Caglar, “Determination of the Thickness and Optical Constants of Transparent Indium- Doped ZnO Thin Films by the Envelope Method,” Materials Science–Poland, Vol. 25, No. 3, April 2007, pp. 709-718.
[20]	O. Altuntasoglu, Y. Matsuda, S. Ida and Y. Matsumoto, “Syntheses of Zinc Oxide and Zinc Hydroxide Single Nanosheets,” Chemistry of Materials, Vol. 22, No.10, April 2010, pp. 3158-3164. doi:10.1021/cm100152q
[21]	X. Qu, W. Wang, S. Lv and D. Jia, “Thermoelectric Properties and Electronic Structure of Al–doped ZnO,” Solid State Communications, Vol. 151, No. 4, February 2011, pp. 332-336. doi:10.1016/j.ssc.2010.11.020