Influence of Defects on Low Temperature Diffusion of Boron in SiC

DOI: 10.4236/msa.2011.29163   PDF   HTML     4,698 Downloads   8,005 Views   Citations


The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.

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I. Atabaev, T. Saliev, D. Saidov, V. Pak, K. Juraev, C. Tin, B. Atabaev and V. Giryansky, "Influence of Defects on Low Temperature Diffusion of Boron in SiC," Materials Sciences and Applications, Vol. 2 No. 9, 2011, pp. 1205-1211. doi: 10.4236/msa.2011.29163.

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The authors declare no conflicts of interest.


[1] I. G. Atabaev, T. M. Saliev and E. N. Bakhranov, “Method of Diffusion of Boron in Silicon Carbide,” Patent of Uzbekistan IDP 05199.
[2] US Patent Application Publication, C. C. Tin, et al., “Low Temperature Impurity Doping of Silicone Carbide,” Pub No: US 2009/0039469 A1, February 2009.
[3] C.-C. Tin, T. Saliev, B. Atabaev, et al., “Oxide Film Assisted Dopant Diffusion in Silicon Carbide,” Thin Solid Films, Vol. 518, No. 24, October 2010, pp. e118-e120. doi:10.1016/j.tsf.2010.03.107
[4] I. G. Atabaev, C.-C. Tin, T. Saliev, B. Atabaev, et al., “None-quilibrium Diffusion of Boron in SiC at Low Temperatures,” Materials Sciences and Applications, Vol. 1, 2010, pp. 53-58.
[5] A. Y. Kuznetsov, M. Janson, A. Hallen, B. G. Svensson and A. N. Larsen, “Boron Diffusion in Si and SiC during 2.5 MeV Proton Irradiation at 500-850?C,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 1999, pp. 279-283. doi:10.1016/S0168-583X(98)00740-X
[6] S. C. Singhal, “Oxidation Kinetics of Hot Pressed Silicon Car-bide,” Journal of Material Science, Vol. 11, No. 7, 1976, pp. 1246-1253.
[7] K. Rüschenschmidt, H. Bracht, M. Laube, N. A. Stolwijk and G. Pensl, “Diffusion of Boron in Silicon Carbide,” Physica B: Condensed Matter, Vol. 308-310, 2001, pp. 734-737.
[8] Y. Gao, S. I. Soloviev and T. S. Sudarshan, “Investigation of Boron Diffusion in 6H-SiC,” Applied Physics Letters, Vol. 83, No. 5, August 2003, pp. 905-907.
[9] I. Girka and E. N. Mokhov, “Vacancy defects in silicon car-bide,” Physics of the Solid State, Vol. 37, No. 11, 1995, pp. 1855-1858.
[10] K. Mochizuki, H. Shimizu and N. Yokoyama, “Dual- Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide,” Japanese Journal of Applied Physics, Vol. 48, 2009, p. 031205 (6 pages).
[11] P. G. Baranov, I. V. Il’in and E. N. Mokhov, “Electron Para-magnetic Resonance of Deep Boron Acceptors in 4H-SiC and 3C-SiC Crystals,” Physics of the Solid State, Vol. 40, No. 1, 1998, pp. 31-34. doi:10.1134/1.1130226
[12] I. G. Atabaev, M. S. Saidov, L. I. Khirunenko, V. I. Shak- hovcov, V. K. Shinkarenko, L. I. Shpinar and A. Yusupov. “Mechanism of defect formation in SixGe1-x alloys irradiated with electrons,” Fiz. Tekh. Poluprovodn., Vol. 21, 1987, pp. 570-573.
[13] M. Katsuno, N. Ohtani, J. Takahashi, H. Yashiro and M. Ka-naya, “Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation,” Japanese Journal of Applied Physics, Vol. 38, No. 8, 1999, pp. 4661-4665. doi:10.1143/JJAP.38.4661
[14] S. A. Sakwe, R. Müller and P. J. Wellmann, “Optimization of KOH Etching Parameters for Quantitative Defect Recognition in n- and p-Type Doped SiC,” Journal of Crystal Growth, Vol. 289, No. 2, April 2006, pp. 520-526. doi:10.1016/j.jcrysgro.2005.11.096
[15] V. F. Agekyan, A. A. Lebedev and Y. A. Stepanov, “Photolu-minescence of Anodized Silicon Carbide,” Fiz. Tehn. Polupro-vodnikov (Russia), Vol. 31, No. 2, 1997, pp. 251-253.
[16] V. Petrova-Kocha, O. Sreselib, G. Polisskia, D. Kovalevb, T. Muschika and F. Kocha. “Luminescence Enhancement by Electrochemical Etching of SiC(6H),” Thin Solid Films, Vol. 255, No. 1-2, January 1995, pp. 107-110.
[17] Kh. Shamuratov, T. Saliev, et al., “Influence of Manganese on Growth and Properties of SiC,” Journal of Uzbek Physics, No. 2, 1997, pp. 26-31.
[18] J. C. Viala, F. Bosselet, V. Laurent and Y. Lepetitcorps, “Me-chanism and Kinetics of the Chemical Interaction between Liquid Aluminium and Silicon-Carbide Single Crystals,” Journal of Materials Science, Vol. 28, No. 19, 1993, pp. 5301-5312. doi:10.1007/BF00570081
[19] J van de Lagemaat, D. Vanmaekelbergh and J. J. Kelly. “Pho-toelectrochemical Characterization of 6H-SiC,” Journal of Applied Physics, Vol. 83, No. 11, 1998, pp. 6089-6095.
[20] M. S. Ferdous, X. Y. Sun, X. Wang, M. N. Fairchild and S. D. Hersee. “Photoelectrochemical Etching Measurement of Defect Density in GaN Grown by Nanoheteroepitaxy,” Journal of Applied Physics, Vol. 99, No. 9, 2006, p. 096105. doi:10.1063/1.2197059
[21] B. G. Atabaev “Surface-Exciton Mechanism of Potential Sput-tering of Ionic and Covalent Crystal by Multicharged Ions,” Surface Investigation, Vol. 4, 2009, pp. 1-4.

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