Share This Article:

Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

DOI: 10.4236/oalib.1101562    795 Downloads   1,115 Views  

ABSTRACT

Hysteresis phenomenon in the capacitance-voltage characteristics under reverse-biased Schottky gate has been investigated for Al0.25Ga0.75N/GaN/SiC structures having three different gate surfaces. This parasitic effect was correlated with the presence of deep levels in our samples. Indeed, we have noticed the presence of two traps named H1 and A1; their respective activation energies, which are determined using capacitance deep level transient spectroscopy (DLTS) are respectively 0.74 and 0.16 eV. The H1 hole trap was associated to extended defect in the Al0.25Ga0.75N/ GaN heterostructure such as threading dislocations and was responsible of capacitance hysteresis phenomenon. The A1 electron trap appears only in the HEMT (1), which has the smaller Schottky contact area. This trap was related to a punctual defect and attributed to free surface states in the access region between the gate and the source.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Saadaoui, S. , Fathallah, O. , Salem, M. , Gaquière, C. and Maaref, H. (2015) Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces. Open Access Library Journal, 2, 1-6. doi: 10.4236/oalib.1101562.

References

[1] Wu, Y.-F., Moore, M., Saxler, A., Wisleder, T. and Parikh, P. (2006) 40-W/mm Double Field-Plated GaN HEMTs. DRC Proc, 151-152.
[2] Joh, J. and del Alamo, J.A. (2012) Impact of Gate Placement on RF Power Degradation in GaN High Electron Mobility Transistors. Microelectronics Reliability, 52, 33-38.
[3] Sun, H.F. and Bolognesi, C.R. (2007) Anomalous Behavior of AlGaN/GaN Heterostructure Field-Effect Transistors at Cryogenic Temperatures: From Current Collapse to Current Enhancement with Cooling. Applied Physics Letters, 90, 123505-123507.
[4] Meneghesso, G., Rossi, F., Salviati, G., Uren, M.J., Muñoz, E. and Zanoni, E. (2010) Correlation between Kink and Cathodoluminescence Spectra in AlGaN/GaN High Electron Mobility Transistors. Applied Physics Letters, 96, 263512-263514.
http://dx.doi.org/10.1063/1.3459968
[5] Fu, L., Lu, H., Chen, D., Zhang, R., Zheng, Y., Chen, T., Wei, K. and Liu, X. (2011) Field-Dependent Carrier Trapping Induced Kink Effect in AlGaN/GaN High Electron Mobility Transistors. Applied Physics Letters, 98, 173508-173510.
http://dx.doi.org/10.1063/1.3584861
[6] Saadaoui, S., Ben Salem, M.M., Gassoumi, M., Maaref, H. and Gaquière, C. (2012) Anomaly and Defects Characterization by I-V and Current Deep Level Transient Spectroscopy of Al0.25Ga0.75N/GaN/SiC High Electron-Mobility Transistors. Journal of Applied Physics, 111, 073713-073718.
[7] Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Dabiran, A.M., Wowchak, A.M., Osinsky, A.V., Cui, B., Chow, P.P. and Pearton, S.J. (2007) Deep Traps resPonsible for Hysteresis in Capacitance-Voltage Characteristics of AlGaN/GaN Heterostructure Transistors. Applied Physics Letters, 91, 232116-232118.
http://dx.doi.org/10.1063/1.2823607
[8] Fang, Z.-Q., Claflin, B., Look, D.C., Green, D.S. and Vetury, R. (2010) Deep Traps in AlGaN/GaN Heterostructures Studied by Deep Level Transient Spectroscopy: Effect of Carbon Concentration in GaN Buffer Layers. Journal of Applied Physics, 108, 063706-063711.
http://dx.doi.org/10.1063/1.3488610
[9] Joh, J. and del Alamo, J.A. (2011) A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors. IEEE Transactions on Electron Devices, 58, 132-140.
http://dx.doi.org/10.1109/TED.2010.2087339
[10] Saadaoui, S., Ben Salem, M.M., Gassoumi, M., Maaref, H. and Gaquière, C. (2011) Electrical Characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky Barrier Diode. Journal of Applied Physics, 110, 013701-013706.
http://dx.doi.org/10.1063/1.3600229
[11] Saadaoui, S., Ben Salem, M.M., Fathallah, O., Gassoumi, M., Gaquière, C. and Maaref, H. (2013) Leakage Current, Capacitance Hysteresis and Deep Traps in Al0.25Ga0.75N/GaN/SiC High-Electron-Mobility Transistors. Physica B: Condensed Matter, 412, 126-129.
http://dx.doi.org/10.1016/j.physb.2012.11.031
[12] Park, Y.S., Lee, M., Jeon, K., Yoon, I.T., Shon, Y., Im, H., Park, C.J., Cho, H.Y. and Han, M.-S. (2010) Deep Level Transient Spectroscopy in Plasma-Assisted Molecular Beam Epitaxy Grown Al0.2Ga0.8N/GaN Interface and the Rapid Thermal Annealing Effect. Applied Physics Letters, 97, 112110-112112.
http://dx.doi.org/10.1063/1.3491798
[13] Huang, S., Shen, B., Xu, F.-J., Lin, F., Miao, Z.-L., Song, J., Lu, L., Cen, L.-B., Sang, L.-W., Qin, Z.-X., Yang, Z.-J. and Zhang, G.-Y. (2009) Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers. Semiconductor Science and Technology, 24, 055005-055009.
http://dx.doi.org/10.1088/0268-1242/24/5/055005

  
comments powered by Disqus

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.