Prospects of Carbyne Applications in Microelectronics
Yuri Prazdnikov
DOI: 10.4236/jmp.2011.28100   PDF   HTML   XML   4,874 Downloads   8,726 Views   Citations


We design carbyne transistor which is integrable into the existing silicon technology and can be scaled up in a rather broad range -- starting from that prepared by us (by 0.5-mkm technology) up to the monomolecular one because the key mechanism here is the inter-chain charge transfer.

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Y. Prazdnikov, "Prospects of Carbyne Applications in Microelectronics," Journal of Modern Physics, Vol. 2 No. 8, 2011, pp. 845-848. doi: 10.4236/jmp.2011.28100.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] P. R. Bandaru, C. Daraio, S. Jin and A. M. Rao, “Novel Electrical Switching Behaviour and Logic in Carbon Nanotube Y-Junctions,” Nature Materials, Vol. 4, 2005, pp. 663-666. doi:10.1038/nmat1450
[2] Yu. P. Kudryavtsev, M. B. Guseva and V. G. Babaev, “Oriented Carbyne Layers,” Carbon, Vol. 30, No. 2, 1992, pp. 213-221. doi:10.1016/0008-6223(92)90082-8
[3] Yu. E. Prazdnikov, A. D. Bozhko and N. D. Novikov, “Energetic Barrier Reduction at the Carbyne Film Interface,” Journal of Russian Laser Research, Vol. 26, No. 1, 2005, pp. 55-65. doi:10.1007/s10946-005-0006-4
[4] J. Yao, Z.-Z. Sun, L. Zhong, D. Natelson and J. M. Tour, “Resistive Switches and Memories from Silicon Oxide”, Nano Letters, Vol. 10, 2010, pp. 4105-4110.

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