[1]
|
E. Tomzig, “Status of Growing Large Si Crystals (300 mm) and Outlook to Larger Diameter Crystals (450 mm). Aspects of Crystal Growth, Defects and Impurities.” In: B. O. Kolbesen, C. Claeys, L. Fabry and F. Tardif, Eds., Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV, Electrochemical Society, Inc., Pennington, 2005, pp. 3-15.
|
[2]
|
V. I. Talanin and I. E. Talanin, “Formation of Grown-in Microdefects in Dislocation-Free Silicon Monocrystals”, In: T. B. Elliot, Ed., New Research on Semiconductors, Nova Science Publishers, Inc., New York, 2006, pp. 31-67.
|
[3]
|
V. I. Talanin and I. E. Talanin, “Mechanism of For- mation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon”, Defect & Diffusion Forum, Vol. 230-232, No. 1, 2004, pp. 177-198. doi:10.4028/www.scientific.net/DDF.230-232.177
|
[4]
|
M. S. Kulkarni, J. C. Holzer and L. W. Ferry, “The Agglomeration Dynamics of Self-Interstitials in Grow-ing Czochralski Silicon Crystals”, Journal of Crystal Growth, Vol. 284, No. 3-4, 2005, pp. 353- 368. doi:10.4028/www.scientific.net/DDF.230-232.177
|
[5]
|
M. S. Kulkarni, V. Voronkov and R. Falster, “Quantification of Defect Dynamics in Unsteady-State and Steady-State Czochralski Growth of Mono-crystalline Silicon”, Journal of The Electrochemical Society, Vol. 151, No. 5, 2004, pp. G663-G669. doi:10.4028/www.scientific.net/DDF.230-232.177
|
[6]
|
V. I. Talanin and I. E. Talanin, “Kinetics Model of Growth and Coalescence of Oxygen and Carbon Precipitates during Cooling of As-Grown Silicon Crystals”, Physics of the Solid State, Vol. 53. No. 1, 2011, pp. 119-126. doi:10.4028/www.scientific.net/DDF.230-232.177
|
[7]
|
V. I. Talanin and I. E. Talanin, “On the Recombination of Intrinsic Point Defects in Dislocation-Free Silicon Single Crystals”, Physics of the Solid State, Vol. 49, No. 3, 2007, pp. 467-470. doi:10.1134/S1063783407030134
|
[8]
|
V. I. Talanin and I. E. Talanin, “Kinetics of High-Temperature Precipitation in Dislocation-Free Silicon Single Crystals”, Physics of the Solid State, Vol. 52, No. 10, 2010, pp. 2063-2068. doi:10.1134/S1063783410100094
|
[9]
|
V. I. Talanin and I. E. Talanin, “Kinetis of Formation of Vacancy Microvoids and Interstitial Dislocation Loops in Dislocation-Free Silicon Crystals”, Physics of the Solid State, Vol. 52, No. 9, 2010, pp. 1880-1886. doi:10.1134/S1063783410100094
|
[10]
|
V. V. Voronkov, “Mechanism of Swirl Defects Formation in Silicon”, Journal of Crystal Growth, Vol. 59, No. 3. 1982, pp. 625-642. doi:10.1016/0022-0248(82)90386-4
|
[11]
|
W. Von Ammon, E.Dornberger and P.O.Hansson, “Bulk Properties of very Large Diameter Silicon Single Crystal”, Journal of Crystal Growth, Vol. 198-199, No. 1-4, 1999, pp. 390-398. doi:10.1016/S0022-0248(98)01140-3
|
[12]
|
V. I. Talanin and I. E. Talanin, “Modeling of Defect Formation Processes in Dislocation-Free Silicon Single Crystals”, Crystallography Reports, Vol. 55. No. 4, 2010, pp. 632-637. doi:10.1134/S1063774510040164
|
[13]
|
A. Natsume, N. Inoue, K. Tanahashi and A. Mori, “Dependence of Temperature Gradient on Growth Rate in CZ Silicon”, Journal of Crystal Growth, Vol. 225, 2001, pp. 221-224. doi:10.1016/S0022-0248(01)00837-5
|
[14]
|
K. Nakamura, T. Saishoji and J. Tomioka, “Grown-in Defects in Silicon Crystals”, Journal of Crystal Growth, Vol. 237-239, No. 10, 2002, pp. 1678- 1684. doi:10.1016/S0022-0248(01)02323-5
|