Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

Mohit Gupta^1*, Punit K. Dhawan¹, Satyendra Kumar Verma², Raja Ram Yadav¹

¹Department of Physics, University of Allahabad, Allahabad, India.
²Government Polytechnic, Gonda, India.

DOI: 10.4236/oja.2015.54017                

Abstract

In this paper, we report the diameter dependent ultrasonic characterization of wurtzite structured InAs semiconductor nanowires at the room temperature. In this work, we have calculated the non-linear higher order elastic constants of InAs nanowires validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the elastic constants for different diameters of the nanowires. Where possible, the results are compared with the experiments. Finally, we have established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires.

Keywords

Ultrasonic Attenuation, Nanowires, Elastic Constants, Thermal Relaxation Time, Thermal Conductivity

Conflicts of Interest

The authors declare no conflicts of interest.

References

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