EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light


It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

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Gulyamov, G. , Dadamirzaev, M. , Sharibayev, N. and Zokirov, N. (2015) EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light. Journal of Electromagnetic Analysis and Applications, 7, 302-307. doi: 10.4236/jemaa.2015.712032.

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The authors declare no conflicts of interest.


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