EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

Gafur Gulyamov; Muhammadjon Gulomkodirovich Dadamirzaev; Nosir Yusupjanovich Sharibayev; Ne’matjon Zokirov

doi:10.4236/jemaa.2015.712032

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JEMAA> Vol.7 No.12, December 2015

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EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

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DOI: 10.4236/jemaa.2015.712032 3,984 Downloads 4,421 Views

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Gafur Gulyamov, Muhammadjon Gulomkodirovich Dadamirzaev^*, Nosir Yusupjanovich Sharibayev, Ne’matjon Zokirov

Affiliation(s)

Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan.

ABSTRACT

It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

KEYWORDS

photocurrent lasing and recombination currents, hot electrons, the microwave field, light, p-n-junction

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Gulyamov, G. , Dadamirzaev, M. , Sharibayev, N. and Zokirov, N. (2015) EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light. Journal of Electromagnetic Analysis and Applications, 7, 302-307. doi: 10.4236/jemaa.2015.712032.

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