EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

Gafur Gulyamov; Muhammadjon Gulomkodirovich Dadamirzaev; Nosir Yusupjanovich Sharibayev; Ne’matjon Zokirov

doi:10.4236/jemaa.2015.712032

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Journal of Electromagnetic Analysis and ... > Vol.7 No.12, December 2015

EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light ()

Gafur Gulyamov, Muhammadjon Gulomkodirovich Dadamirzaev^*, Nosir Yusupjanovich Sharibayev, Ne’matjon Zokirov

Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan.

DOI: 10.4236/jemaa.2015.712032 PDF HTML XML 4,231 Downloads 4,654 Views

Abstract

It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

Keywords

photocurrent lasing and recombination currents, hot electrons, the microwave field, light, p-n-junction

Share and Cite:

Gulyamov, G. , Dadamirzaev, M. , Sharibayev, N. and Zokirov, N. (2015) EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light. Journal of Electromagnetic Analysis and Applications, 7, 302-307. doi: 10.4236/jemaa.2015.712032.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Ablyazimova, N.A., Veynger, A.I. and Food, V.S. (1992) The Impact of a Strong Microwave Field in the Photovoltaic Properties of Silicon p-n-Junctions. Physics and Engineering of St. Petersburg Semiconductors, 26, 1041-1047.
[2]	Tautz, J. (1962) Photo and Thermoelectric Phenomena in Semiconductors. Moscow, IL, 192s.
[3]	Ashmontas, S.P. (1984) Monograph Series. Electrons in Semiconductors. No. 5. Elektrogradientnye Phenomena in Semiconductors. In: Pozhela, Yu., Ed., Mokslas, Vilnius, 183.
[4]	Veynger, A.I., Kramer, N.I., Paritssky, L.G. and Abdinov, A.S. (1972) Thermophotovoltaic Effect on Heating Carriers in Germany. Semiconductors, 6, 353-359.
[5]	Akopyan, E.A., Veynger, A.I. and Paritssky, L.G. (1974) Photovoltage Hot Carriers at the pn-Junction. Semiconductors, 8, 754-759.
[6]	Dadamirzaev, M.G. (2011) Heating of Charge Carriers and Rectification of Current in Asymmetrical p-n Junction in a Microwave Field. Semiconductors, 45, 288-291. http://dx.doi.org/10.1134/S1063782611030092
[7]	Dadamirzaev, M.G. (2015) Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field. Journal of Modern Physics-USA, 6, 176-180. http://dx.doi.org/10.4236/jmp.2015.62023
[8]	Pikus, G.E. (1965) Fundamentals of the Theory of Semiconductor Devices. Science, Moscow, 448.